GaN Systems Launches World’s First GaN Power Stage with Programmable Source Current and Overcurrent Protection

GaN Systems Launches World’s First GaN Power Stage with Programmable Source Current and Overcurrent Protection

GaN Systems announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN) and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry’s first to provide programmable overcurrent protection with adjustable thresholds and programmable source current for adjustable turn-on slew rate.

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