Cambridge GaN Devices (CGD) has signed a global distribution agreement with Digi-Key. Under the agreement, Digi-Key will offer CGD’s rugged ICeGaN HEMTs and related products. For CGD, the deal is a step in scaling up and building a GaN ecosystem for its ICeGaN used in high-power conversion. The potential to penetrate and support new markets globally is important to CGD.
Recently, CGD introduced its 650 V H2 series ICeGaN gallium nitride HEMTs that reduce design complexity, according to CGD. ICeGaN HEMTs feature a QG that is 10x lower than silicon parts and a QOSS that is 5x less, reducing switching losses while enabling reductions in system size, weight, and cost. The H2 Series addresses reliability and ruggedness concerns with CGD’s smart gate interface, virtually eliminating typical e-mode GaN weaknesses.
